| PECVD淀积Si3N4作为光刻掩膜版的保护膜 |
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| 引用本文： | 张晓情,李沛林,王敬松,杨建红.PECVD淀积Si3N4作为光刻掩膜版的保护膜[J].半导体技术,2009,34(11). |
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| 作者姓名： | 张晓情 李沛林 王敬松 杨建红 |
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| 作者单位： | 天光半导体有限公司,甘肃,天水,741000;兰州大学,微电子研究所,兰州,730000 |
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| 摘 要： | 采用等离子增强化学汽相淀积(PECVD)方法淀积Si3N4薄膜作为光刻掩膜版的保护膜,可以降低掩膜版受损程度,延长使用寿命.分析了Si3N4膜厚的选取要求,给出了PECVD淀积Si3N4膜的工艺条件.实际制作了带有Si3N4保护的光刻掩膜版,并与不带Si3N4保护的掩膜版的使用情况做了对比.结果表明,带有Si3N4保护的光刻掩膜版的使用寿命可明显延长2倍以上.
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| 关 键 词： | 等离子增强化学气相淀积 氮化硅 光刻版 保护膜 |
Silicon Nitride Thin Film Deposited by PECVD as a Protecting Layer on Photolithography Mask |
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| Zhang Xiaoqing,Li Peilin,Wang Jingsong,Yang Jianhong.Silicon Nitride Thin Film Deposited by PECVD as a Protecting Layer on Photolithography Mask[J].Semiconductor Technology,2009,34(11). |
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| Authors: | Zhang Xiaoqing Li Peilin Wang Jingsong Yang Jianhong |
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| Affiliation: | Zhang Xiaoqing1,Li Peilin2,Wang Jingsong2,Yang Jianhong2(1.Tianguang Semiconductor Co.,Ltd.,Tianshui 741000,China,2.Institute of Microelectronics,Lanzhou University,Lanzhou 730000,China) |
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| Abstract: | Si3N4 thin film was deposited as a protecting layer of lithography mask using PECVD to reduce the damage and extend the lifetime of the mask.The optimal thickness of Si3N4 film was analyzed and the process parameters in PECVD were proposed.In addition,the mask with Si3N4 protection layer was manufactured and compared with that without Si3N4 protection layer.The results show that the lifetime of the mask with Si3N4 protection layer is extend twice at least. |
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| Keywords: | PECVD silicon nitride(Si3N4) photolithography mask protection layer |
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