| 蓝宝石衬底nm级CMP技术研究 |
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| 引用本文： | 马振国,刘玉岭,武亚红,王立发,陈景. 蓝宝石衬底nm级CMP技术研究[J]. 微纳电子技术, 2008, 45(1): 51-54 |
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| 作者姓名： | 马振国 刘玉岭 武亚红 王立发 陈景 |
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| 作者单位： | 河北工业大学,微电子研究所,天津,300130 |
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| 摘 要： | 介绍了蓝宝石衬底的化学机械抛光工艺,讨论分析了影响蓝宝石衬底化学机械抛光的因素,定量确定了最佳CMP工艺。提出先以重抛过程提高蓝宝石抛光速率,然后以轻抛过程降低最终表面粗糙度的工艺路线。在配制抛光液时加入FA/OⅠ型活性剂保护SiO2胶粒的双电子层结构。在轻抛过程之前抛光垫用原液浸泡20～30min,抛光磨料直径为20～40nm。实验最佳工艺条件下的抛光速率达231.6nm/min,粗糙度降至0.34nm。
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| 关 键 词： | 蓝宝石 化学机械抛光 表面状态 粗糙度 |
| 文章编号： | 1671-4776（2008）01-0051-04 |
| 收稿时间： | 2007-06-06 |
| 修稿时间： | 2007-06-06 |
Research on Sapphire Substrate Nano-CMP |
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| Ma Zhenguo,Liu Yuling,Wu Yahong,Wang Lifa,Chen Jing. Research on Sapphire Substrate Nano-CMP[J]. Micronanoelectronic Technology, 2008, 45(1): 51-54 |
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| Authors: | Ma Zhenguo Liu Yuling Wu Yahong Wang Lifa Chen Jing |
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| Affiliation: | Ma Zhenguo,Liu Yuling,Wu Yahong,Wang Lifa,Chen Jing (Institute of Microelectronics,Hebei University of Technology,Tianjin 300130,China) |
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| Abstract: | Chemical mechanical polishing (CMP) technique of sapphire substrate was introduced. The factors of influencing polishing rate and RMS were discussed and CMP technique was quantified. The polishing rate of sapphire was enhanced by heavy pressure process and then the RMS of surface was reduced by light pressure process. FA/OⅠsurfactant in the slurry was added to protect the double electronic shell of SiO2 sol. Polishing pad was dipped in SiO2 sol for 20-30 min before light pressure process, and the diameter of SiO2 sol was 20-40 nm. At the best experimental condition, polishing rate reached 231.6 nm/min and RMS reduced to 0.34 nm. |
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| Keywords: | sapphire CMP surface state RMS |
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