| EUV光致抗蚀剂研究进展 |
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| 引用本文： | 贾越,刘永富. EUV光致抗蚀剂研究进展[J]. 广州化工, 2009, 37(6): 7-11 |
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| 作者姓名： | 贾越 刘永富 |
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| 作者单位： | 北京师范大学化学学院,北京,100875;中国石油化工股份有限公司,北京化工研究院,北京,100013 |
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| 摘 要： | 波长13．5nm的极紫外（EUV）光刻技术可以刻画线幅〈32nm的图像，能满足信息技术对于光致抗蚀剂高分辨率的要求，即将成为下一代纳米成像技术，利用EUV成像技术，可以实现集成电路的超小型化。本文调研了近几年来EUV抗蚀剂的研究进展，指出影响抗蚀剂性能的主要因素，包括分辨率、LWR、LER、成像灵敏度、产气作用、成像侧面角度等，对近几年来有关EUV光致抗蚀剂的研究开发情况进行了归纳总结。
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| 关 键 词： | EUV 抗蚀剂 LWR 产气作用 |
Research Progress on EUV Photoresist |
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| JIA Yue,LIU Yong-fu. Research Progress on EUV Photoresist[J]. GuangZhou Chemical Industry and Technology, 2009, 37(6): 7-11 |
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| Authors: | JIA Yue LIU Yong-fu |
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| Affiliation: | JIA Yue , LIU Yong - fu (1 Chemical Institute of Beijing Normal University,Beijing 100875; 2 Beijing Research Institute of Chemical Industry,SINOPEC ,Beijing 100013 ,China) |
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| Abstract: | The extreme ultraviolet （EUV, wavelength = 13.5nm）lithography technology can etch the images of fine patterns of less than 32nm line width, it is able to meet the requirements of information technology for high - resolution photoresist, and it will become the next generation of nano - imaging techniques. The EUV lithography technology can realize the ultra small integrated circuits. The study of EUV resist progress in recent years was referenced. The main impact factors of the resist performance were indicated as follows： the transparency, LWR, LER, imaging sensitivity, outgassing, sidewall profiles etc. The research and development progress of EUV photoresist in recent years were summarized. |
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| Keywords: | EUV LWR |
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