Thermal stability of sectorial split-drain magnetic field-effect transistors |
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| Affiliation: | 1. Canaan Semiconductor Ltd., Hong Kong;2. Department of Applied Physics, Hong Kong Polytechnic University, Hung Hum, Hong Kong;3. Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong;4. Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam, Hong Kong;1. Nano Device Simulation Laboratory, Electronics and Telecommunication Engineering Department, Jadavpur University, Kolkata 700 032, India;2. Dept. of ECE, S.K.P Engineering College, Thiruvannamalai, Tamil Nadu 606 601, India;1. Politecnico di Milano, Dipartimento di Ingegneria Civile e Ambientale, Piazza Leonardo da Vinci 32, 20133 Milano, Italy;2. STMicroelectronics, AMS Group, Via Tolomeo 1, 20010 Cornaredo, Italy;1. Institute for Electronic Design Automation, Technische Universität München, Munich, Germany;2. Institute of Microelectronic Systems, Leibniz Universität Hannover, Hannover, Germany;1. School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, People’s Republic of China;2. Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of China |
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| Abstract: | The effect of charge trapping on the performance of sectorial Split-Drain Magnetic Field Effect Transistor (SD-MAGFET) under the influence of magnetic field is examined based on conventional capacitance measurement techniques upon different magnetic field strength and thermal conditions. The experimental results confirmed the charge trapping effect in sectorial SD-MAGFET is magnetic field and temperature dependent, where the charge trapping sites are localized at the channel boundary, which verifies the conjecture of trap-assisted magnetic sensitivity hysteresis and deterioration of the device found in recent literatures. The results of the study are useful to sectorial SD-MAGFET in high performance magnetic sensing applications. |
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