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Effect of electron irradiation on morphological,compositional and electrical properties of nanocluster carbon thin films grown using room temperature based cathodic arc process for large area microelectronics |
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| Affiliation: | 1. Department of E&C Engg., Manipal University, Manipal 576104, India;2. Department of E&C Engg., RVCE, Bangalore 560059, India;3. Microton Centre., Department of Physics, Mangalore University, Mangalore 574199, India;4. Department of Materials Science, Mangalore University, Mangalore 574199, India;5. Department of Physics, Manipal University, Manipal 576104, India;1. Lviv Polytechnic National University, 12 Bandera str., Lviv 79013, Ukraine;2. Lviv Institute of Materials of SRC “Carat”, 202 Stryjska str., Lviv 79031, Ukraine;3. Lviv State University of Life Safety, 35 Kleparivska str., Lviv 79007, Ukraine;4. Jan Dlugosz University, 13/15 Al. Armii Krajowej, Czestochowa 42201, Poland;5. Drohobych State Pedagogical University, 24 Ivan Franko str., Drohobych 82100, Ukraine;1. Philips Research, High Tech Campus 34-6, 5656AE Eindhoven, The Netherlands;2. Department of Mechanical Engineering, Eindhoven University of Technology, PO Box 513, 5600MB Eindhoven, The Netherlands;1. School of Information and Navigation, Air Force Engineering University, Xian 710077, China;2. Lanzhou Institute of Physics, Lanzhou 730000, China |
| Abstract: | The influence of 8 MeV electron beam bombardment on room temperature grown nanocluster carbon using cathodic arc process has been studied here. Atomic force microscopy (AFM) study shows that surface roughness varies with varying electron doses. High doses of electrons could causes thermal induce graphitization and morphological changes in the films. Raman spectroscopy analysis reveals that G-peak vary from 1555 cm?1 to 1570 cm?1 and D-peak varying from 1361 cm?1 to 1365 cm?1 indicating the disorderness and presence of both graphitic and diamond-like phases. Room temperature conductivity changes by two to three orders in magnitude. The conductivity in the films could be due to conduction of charge carriers through neighboring islands of conductive chains. Defect states calculated using the differential technique varies from 8 × 1017cm?3 eV?1 to 1.5 × 1019 cm?3 eV?1. Irradiation of nanocluster carbon thin films could be helpful to tune the electrical properties and defect densities of the nanocluster carbon films for various large area, flexible electronic and nano electronic applications. |
| Keywords: | Nanocluster carbon thin films Cathodic arc process Raman spectroscopy Electron irradiation Defect density Electrical conductivity |
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