A study on IGBT junction temperature (Tj) online estimation using gate-emitter voltage (Vge) at turn-off |
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| Affiliation: | 1. ABB Switzerland Ltd, Corporate Research, Segelhofstrasse 1 K, 5405 Baden, Switzerland;2. ABB Switzerland Ltd, Business Unit Power Conversion, Austrasse, 5300 Turgi, Switzerland;1. Texas Instruments, Haggertystr. 1, 85356 Freising, Germany;2. Infineon Technologies AG, Am Campeon 1-12, 85579 Neubiberg, Germany;1. CEMES-CNRS, 29 rue Jeanne Marvig, 31055 Toulouse Cedex 4, France;2. Freescale Semiconductor Inc., 134 Avenue du Général Eisenhower, 31100 Toulouse, France;1. Materials Innovation Institute (M2i), Delft, The Netherlands;2. Delft University of Technology, EEMCS Faculty, Delft, The Netherlands;3. Philips Lighting, Eindhoven, The Netherlands;4. Beijing Research Center, Delft University of Technology, Beijing, China;5. State Key Laboratory of Solid State Lighting, Beijing, China |
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| Abstract: | A novel method is presented for online estimation of the junction temperature (Tj) of semiconductor chips in IGBT modules, based on evaluating the gate-emitter voltage (Vge) during the IGBT switch off process. It is shown that the Miller plateau width (in the Vge waveform) depend linearly on the junction temperature of the IGBT chips. Hence, a method can be proposed for estimating the junction temperature even during converter operation – without the need of additional thermal sensors or complex Rth network models. A measurement circuit was implemented at gate level to measure the involved time duration and its functionality was demonstrated for different types of IGBT modules. A model has been proposed to extract Tj from Vge measurements. Finally, an IGBT module with semiconductor chips at two different temperatures has been measured using Vge method and this method was found to provide the average junction temperature of all the semiconductor chips. |
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| Keywords: | IGBT Junction temperature Lifetime estimation Temperature-sensitive electrical parameters Gate-emitter voltage Miller plateau |
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