Effects of PCBM concentration on the electrical properties of the Au/P3HT:PCBM/n-Si (MPS) Schottky barrier diodes |
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| Affiliation: | 1. Institute of Mathematics and Informatics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str. Bl. 8, 1113 Sofia, Bulgaria;2. Faculty of Mathematics and Informatics, Sofia University, 5 James Bourchier Blvd., 1164 Sofia, Bulgaria;1. Department of Materials Science And Engineering, Kahramanmaras Sutcu Imam University, Kahramanmaraş 4610, Turkey;2. Department of Physics, Kahramanmaras Sutcu Imam University, Kahramanmaraş 4610, Turkey;3. Department of Physics, Fırat University, Elazıg 2310, Turkey;1. Laboratoire Matériaux Avancés et Phénomènes Quantiques, Faculté des Sciences de Tunis, Université de Tunis El Manar, Campus Universitaire, 2092 Tunis, Tunisia;2. Faculté des Sciences de Bizerte, Université de Carthage, 7021 Zarzouna, Bizerte, Tunisia;3. Department of Chemical Engineering, Electrochemistry, Corrosion and Energetic Valorization Laboratory, A. MIRA University, Targa Ouzemmour, 06000 Bejaia, Algeria;4. Institute of Polymeric Materials and Testing, Johannes Kepler University, Altenbergerstr. 69, 4040 Linz, Austria;1. Departamento de Electrónica y Tecnología de Computadores, CITIC-UGR, Universidad de Granada, 18071 Granada, Spain;2. Dept. of Electrical and Computer Engineering, McMaster University, Hamilton, ON L8S 4K1, Canada |
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| Abstract: | In this study, the gold/poly(3-hexylthiophene):6,6]-phenyl C61 butyric acid methyl ester/n-type silicon (Au/P3HT:PCBM/n-Si) metal–polymer–semiconductor (MPS) Schottky barrier diodes (SBDs) were investigated in terms of the effects of PCBM concentration on the electrical parameters. The forward and reverse bias current–voltage (I–V) characteristics of the Au/P3HT:PCBM/n-Si MPS SBDs fabricated by using the different P3HT:PCBM mass ratios were studied in the dark, at room temperature. The main electrical parameters, such as ideality factor (n), barrier height (ΦB0), series resistance (Rs), shunt resistance (Rsh), and density of interface states (Nss) were determined from I–V characteristics for the different P3HT:PCBM mass ratios (2:1, 6:1 and 10:1) used diodes. The values of n, Rs, ΦB0, and Nss were reduced, while the carrier mobility and current were increased, by increasing the PCBM concentration in the P3HT:PCBM organic blend layer. The ideal values of electrical parameters were obtained for 2:1 P3HT:PCBM mass ratio used diode. This shows that the electrical properties of MPS diodes strongly depend on the PCBM concentration of the P3HT:PCBM organic layer. Moreover, increasing the PCBM concentration in P3HT:PCBM organic blend layer improves the quality of the Au/P3HT:PCBM/n-Si (MPS) SBDs which enables the fabrication of high-quality electronic and optoelectronic devices. |
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| Keywords: | P3HT:PCBM organic blend layer PCBM concentration Schottky barrier diodes |
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