Analysis of Harmonic distortion in asymmetric underlap DG-MOSFET with high-k spacer |
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| Affiliation: | 1. Molecular and Computational Biology Program, Department of Biological Sciences, University of Southern California, Los Angeles, CA 90089, USA;2. Department of Chemistry, University of Southern California, Los Angeles, CA 90089, USA;3. Center of Excellence in NanoBiophysics, University of Southern California, Los Angeles, CA 90089, USA;4. Norris Comprehensive Cancer Center, University of Southern California, Los Angeles, CA 90089, USA |
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| Abstract: | In analog and RF circuit applications Harmonic distortion (HD) is an important reliability issue that arises due to non-linear performance of devices. In this paper, the asymmetric underlap double gate MOSFET (AUDG-MOSFET) is analyzed for the HD with high-k spacers. In this analysis the devices are compared for their primary distortion components designated by the second order distortion (HD2), the third order distortion (HD3) and the total harmonic distortion (THD). The distortion characteristics of the device are studied as a function of the gate voltage (Vgs) and the transconductance generation factor (gm/Id) considering the influence of drain current (Id) and the transconductance (gm). A significant improvement on the HD of the device by using high-k spacers is inferred, thereby ascertaining better reliability for RF applications. In addition to this, the distortion in the output characteristics of Cascode and differential amplifier circuits designed with AUDG-MOSFET device is also analyzed in detail. |
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