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Focused ion beam contact to non-volatile memory cells
Affiliation:1. TU Berlin, Departement of Semiconductor Devices, 10587 Berlin, Germany;2. nVIDIA, Santa Clara, CA, USA;1. Le2i, UMR CNRS 6306, University of Burgundy, 9 Avenue Alain Savary, 21000 Dijon, France;2. Centre National d’Etudes Spatiales (CNES), 18 Avenue Edouard Belin, 31401 Toulouse, France;1. STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles Cedex, France;2. Laboratory of Computer Sciences, Paris 6 (LIP6), Systems On Chips Department, UPMC University, 4 place Jussieu, 75252 Paris Cedex 05, France;1. University of Vienna, Physics of Nanostructured Materials, Vienna, Austria;2. Materials Center Leoben Forschung GmbH, Leoben, Austria;3. Vienna University of Technology, Faculty of Technical Chemistry, Vienna, Austria;1. Semiconductor Devices Division, Berlin University of Technology, Berlin, Einsteinufer 19, 10587 Berlin, Germany;2. French Space Agency (CNES), Toulouse, France;3. Hamamatsu Photonics Deutschland, Herrsching, Germany
Abstract:Electrical characterization of non-volatile memory cells has been performed. A focused ion beam (FIB) contact procedure is presented that allows to contact the floating gate.Calculations and measurement results on an exemplary floating gate memory cell show intact cell structure with limited retention time after FIB modification. The presented procedure allows the measurement and control of the previously unavailable floating gate current and voltage.
Keywords:Charge  Focused ion beam  Circuit edit  Invasiveness  Non-volatile memory
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