Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials |
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| Affiliation: | 1. Engineering Product Development Pillar, Singapore University of Technology and Design, Singapore 138 682, Singapore;2. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA;1. Le2i, UMR CNRS 6306, University of Burgundy, 9 Avenue Alain Savary, 21000 Dijon, France;2. Centre National d’Etudes Spatiales (CNES), 18 Avenue Edouard Belin, 31401 Toulouse, France;1. STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles Cedex, France;2. Laboratory of Computer Sciences, Paris 6 (LIP6), Systems On Chips Department, UPMC University, 4 place Jussieu, 75252 Paris Cedex 05, France;1. SAGE-ENISo, National Engineering School of Sousse, 4023 University of Sousse, Tunisia;2. Al Leith Engineering College, Umm Al-Qura University, Saudi Arabia;3. ISIM, University of Gabes, 6072 Gabes, Tunisia;4. ESTACA Research Center, 92532 Levallois Perret, Paris, France;5. GPM-UMR CNRS 6634, University of Rouen, 76801 Saint Etienne du Rouvray, France;1. University of Vienna, Physics of Nanostructured Materials, Vienna, Austria;2. Materials Center Leoben Forschung GmbH, Leoben, Austria;3. Vienna University of Technology, Faculty of Technical Chemistry, Vienna, Austria |
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| Abstract: | Palladium-doped and (Cu, Pt)-doped high reliability gold wires were used to form wire bond interconnects on aluminum IC metallization. By isothermal annealing of wire bond samples the formation of intermetallic Au–Al phases was stimulated. SEM/EBSD investigations of the phase regions exhibited significantly slower isothermal growth rates compared to a reference gold wire. Correlated TEM, STEM–EDXS and nanobeam diffraction analyses revealed that Pd is preferentially incorporated into the Au8Al3 intermetallic forming a new stable phase but additionally can obviously form a new Pd-rich ternary intermetallic. In comparison, Cu dopants are also accumulated into a new Al–Au–Cu phase while Pt is rather found agglomerating within grain boundaries and interfaces. These results suggest a diffusion barrier model that allows discussing how wire doping can affect the bond contact microstructure, thus increasing the lifetime of bond contacts. |
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| Keywords: | Wire bonding Intermetallic compounds Doping Microstructure analysis TEM Reliability |
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