Low power high gain CMOS LNA based on inverter cell and self-body bias for UWB receivers |
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| Affiliation: | 1. Complutense University of Madrid, Computer Architecture and Automation, Facultad de Informática, c/Prof. García Santesmases s/n, 28040 Madrid, Madrid, Spain;2. Northwestern University of Evanston, Department of Electrical Engineering and Computer Science, Tech Building, L471, 2145 Sheridan Road, 60208 Evanston (IL), United States;1. University of Massachusetts, Lowell, MA, USA;2. ON Semiconductor, Phoenix, AZ, USA;1. Department of Electrical Engineering, University of Malaya, 50603 Kuala Lumpur, Malaysia;2. Department of Electrical and Electronic Engineering, University Putra Malaysia, 43400 Serdang, Malaysia |
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| Abstract: | A low-power low-noise amplifier (LNA) utilized a resistive inverter configuration feedback amplifier to achieve the broadband input matching purposes. To achieve low power consumption and high gain, the proposed LNA utilizes a current-reused technique and a splitting-load inductive peaking technique of a resistive-feedback inverter for input matching. Two wideband LNAs are implemented by TSMC 0.18 μm CMOS technology. The first LNA operates at 2–6 GHz. The minimum noise figure is 3.6 dB. The amplifier provides a maximum gain (S21) of 18.5 dB while drawing 10.3 mW from a 1.5-V supply. This chip area is 1.028×0.921 mm2. The second LNA operates at 3.1–10.6 GHz. By using self-forward body bias, it can reduce supply voltage as well as save bias current. The minimum noise figure is 4.8 dB. The amplifier provides a maximum gain (S21) of 17.8 dB while drawing 9.67 mW from a 1.2-V supply. This chip area is 1.274×0.771 mm2. |
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| Keywords: | Low noise amplifier (LNA) Resistive-feedback inverter Low power Self-forward body bias Ultra-wideband (UWB) |
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