Short-circuit protection for an IGBT with detecting the gate voltage and gate charge |
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| Affiliation: | 1. Department of Biological Functions Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu, Fukuoka 808-0196, Japan;2. Department of Electrical Engineering and Electronics, Kyushu Institute of Technology, 1-1 Sensuicho, Tobata-ku, Kitakyushu, Fukuoka 804-8550, Japan;3. The International Centre for the Study of East Asian Development (ICSEAD), 1-8 Hibikino, Wakamatsu-ku, Kitakyushu, Fukuoka 808-0196, Japan;1. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Cerdanyola del Valles, Spain;2. Departamento de Electricidad y Electrónica, Universidad de Valladolid, Valladolid, Spain;3. Department of Chemistry, University of Helsinki, Helsinki, Finland;1. University of Vienna, Physics of Nanostructured Materials, Vienna, Austria;2. Materials Center Leoben Forschung GmbH, Leoben, Austria;3. Vienna University of Technology, Faculty of Technical Chemistry, Vienna, Austria;1. SAGE-ENISo, National Engineering School of Sousse, 4023 University of Sousse, Tunisia;2. Al Leith Engineering College, Umm Al-Qura University, Saudi Arabia;3. ISIM, University of Gabes, 6072 Gabes, Tunisia;4. ESTACA Research Center, 92532 Levallois Perret, Paris, France;5. GPM-UMR CNRS 6634, University of Rouen, 76801 Saint Etienne du Rouvray, France;1. STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles Cedex, France;2. Laboratory of Computer Sciences, Paris 6 (LIP6), Systems On Chips Department, UPMC University, 4 place Jussieu, 75252 Paris Cedex 05, France;1. Le2i, UMR CNRS 6306, University of Burgundy, 9 Avenue Alain Savary, 21000 Dijon, France;2. Centre National d’Etudes Spatiales (CNES), 18 Avenue Edouard Belin, 31401 Toulouse, France;1. Engineering Product Development Pillar, Singapore University of Technology and Design, Singapore 138 682, Singapore;2. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA |
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| Abstract: | This paper proposes a new short-circuit protection method for an IGBT. The proposed method is characterized by detecting not only gate charge but also gate voltage of the IGBT. This results in a shorter protection time, compared to the previous method that detects only the gate charge. A real-time monitoring system using an FPGA, A/D converters, and a D/A converter is used for the proposed protection method. Experimental results verify that the proposed method achieves a protection time of 390 ns, which is reduced by 68% compared to the previous method. |
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| Keywords: | Insulated-Gate Bipolar Transistors (IGBTs) Short-circuit protection Power electronic converters |
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