On the current conduction mechanisms of CeO2/La2O3 stacked gate dielectric |
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| Affiliation: | 1. Institute of Microelectronics and Photonics, Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China;2. Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, Yokohama 226-8502, Japan;1. Canaan Semiconductor Ltd., Hong Kong;2. Department of Applied Physics, Hong Kong Polytechnic University, Hung Hum, Hong Kong;3. Department of Electronic Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong;4. Department of Electrical and Electronic Engineering, University of Hong Kong, Pokfulam, Hong Kong;1. Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan, ROC;2. Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, Puli 545, Taiwan, ROC;3. Department of Electronic Engineering, National Chiao Tung University, Hsin-Chu 300, Taiwan, ROC;1. Department of Physics, Guru Nanak Dev University, Amritsar, Punjab 143005, India;2. Inter University Accelerator Center, Aruna Asaf Ali Marg, P.O. Box 10502, New Delhi 110067, India;3. Joint Institute for Nuclear Research, Dubna 141980, Russia;4. Department of Radiotherapy, Post Graduate Institute of Medical Education and Research, Chandigarh 160012, India;1. Embedded Processing Business, Texas Instruments, Bangalore 93, India;2. Indian Institute of Technology Bombay, Mumbai, India;1. Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Via Golgi 40, 20133 Milano, Italy;2. Via Torri Bianche 24, 20871 Vimercate, MB, Italy |
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| Abstract: | It was found that the electrical properties of CeO2/La2O3 stack are much better than a single layer La2O3 film. A thin CeO2 capping layer can effectively suppress the oxygen vacancy formation in the La2O3 film. This work further investigates the current conduction mechanisms of the CeO2 (1 nm thick)/La2O3 (4 nm thick) stack. Results show that this thin stacked dielectric film still has a large leakage current density; the typical 1?V leakage can exceed 1 mA/cm2 at room temperature. The large leakage current should be due to both the oxide defect centers as well as the film structure. Results show that at low electric field (<0.2 MV/cm), the thermionic emission induced current conduction in this stacked structure is quite pronounced as a result of interface barrier lowering due to the capping CeO2 film which has a higher k value than that of the La2O3 film. At higher electric fields, the current conduction is governed by Poole–Frenkel (PF) emission via defect centers with an effective energy level of 0.119 eV. The temperature dependent current–voltage characteristics further indicate that the dielectric defects may be regenerated as a result of the change of the thermal equilibrium of the redox reaction in CeO2 film at high temperature and the drift of oxygen under the applied electric field. |
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