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Influence of temperature and dose rate on the degradation of BiCMOS operational amplifiers during total ionizing dose testing
Affiliation:1. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Cerdanyola del Valles, Spain;2. Departamento de Electricidad y Electrónica, Universidad de Valladolid, Valladolid, Spain;3. Department of Chemistry, University of Helsinki, Helsinki, Finland;1. Semiconductor Devices Division, Berlin University of Technology, Berlin, Einsteinufer 19, 10587 Berlin, Germany;2. French Space Agency (CNES), Toulouse, France;3. Hamamatsu Photonics Deutschland, Herrsching, Germany;1. Le2i, UMR CNRS 6306, University of Burgundy, 9 Avenue Alain Savary, 21000 Dijon, France;2. Centre National d’Etudes Spatiales (CNES), 18 Avenue Edouard Belin, 31401 Toulouse, France;1. STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles Cedex, France;2. Laboratory of Computer Sciences, Paris 6 (LIP6), Systems On Chips Department, UPMC University, 4 place Jussieu, 75252 Paris Cedex 05, France;1. Engineering Product Development Pillar, Singapore University of Technology and Design, Singapore 138 682, Singapore;2. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Abstract:The degradation of BiCMOS operational amplifiers TLV2451CP under the gamma-irradiation is studied for different dose rates and temperatures during irradiation. It is shown that studied devices are sensitive to both enhanced low dose rate sensitivity and time-dependent effects. Evidently the main reason for degradation of studied devices is build-up of the interface traps. Obtained results show possibility to develop an approach for total ionizing dose testing of BiCMOS devices considering low dose rate effects.
Keywords:BiCMOS operational amplifiers  Dose rate  Gamma-irradiation  Total ionizing dose testing
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