Threshold voltage instability of nanoscale charge trapping non-volatile memory at steady phase |
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| Affiliation: | 1. Politecnico di Torino, Dipartimento di Automatica e Informatica, Torino, Italy;2. Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, Brazil;1. School of Micro Electronics, Shanghai Jiao Tong University, China;2. Cisco Research Center, USA;1. Moscow Engineering Physics Institute (NRNU “MEPhI”), Moscow, Russia;2. Centro Nacional de Microelectrónica (CNM, CSIC), Barcelona, Spain;3. Santa Cruz Institute for Particle Physics (SCIPP, UCSC), Santa Cruz, CA, USA;4. Lawrence Berkeley National Laboratory (LBNL), Physics Division, Berkeley, CA, USA;5. Brookhaven National Laboratory (BNL), Upton, NY, USA;6. University of Pennsylvania, Philadelphia, PA, USA;1. Aselsan, Mehmet Akif Ersoy Mahallesi 296, 16, 06370 Yenimahalle, Ankara, Turkey;2. Universidad Antonio de Nebrija, C/Pirineos, 55 E-28040 Madrid, Spain;1. Institute of Microelectronics, Tsinghua University, 100084 Beijing, China;2. IMEC, B-3001 Leuven, Belgium |
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| Abstract: | Post program/erase (P/E) cycled threshold voltage (Vt) instability is one of the major reliability concerns for nanoscale charge trapping (CT) non-volatile memory (NVM) devices. In this study, anomalous program state Vt instability of fully annealed nanoscale nitride based CT NVM device at steady phase is carefully examined. To the best knowledge of the authors, for the first time, the relationship between the derived apparent activation energy (Eaa) of this anomalous program state Vt instability at steady phase and the P/E cycle count is established. They are found to adhere to the power law decay relationship. Anomalous program state Vt instability at steady phase was found to favor lateral redistribution of trapped charge model instead of vertical charge transport model. Physical interpretations of its underlying physical mechanisms and reliability implications to reliability performance of nanoscale nitride based CT NVM were presented. Plausible technical solutions to mitigate the reliability degradation induced by this anomalous program state Vt instability on nanoscale nitride based CT NVM were proposed. |
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| Keywords: | Activation energy Charge trapping non-volatile memory Data retention Nanoscale semiconductors Threshold voltage instability |
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