Effect of gate barrier and channel buffer layer on electric properties and transparence of the a-IGZO thin film transistor |
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| Affiliation: | 1. Department of Mechanical Engineering, National Cheng Kung University, Tainan 701, Taiwan;2. Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan;1. Institut FEMTO-ST, UMR 6174, Université de Franche-Comté, CNRS, ENSMM, UTBM, 32, Avenue de l''observatoire, 25044 Besancon Cedex, France;2. Solid State Electronics, The Ångström Laboratory, Uppsala University, Box 534, S-75121 Uppsala, Sweden;3. Department of Physics and Astronomy, The Ångström Laboratory, Uppsala University, Box 516, S-75120 Uppsala, Sweden;1. Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan;2. Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan;3. Industrial Technology Research Institute, Mechanical and Systems Research Laboratories, Hsinchu 310, Taiwan;1. Department of Materials Science, Shanghai University, Shanghai 200072, China;2. Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, Shanghai 200072, China;1. School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, PR China;2. Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, PR China;3. Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061, PR China |
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| Abstract: | Different structures of a-IGZO (amorphous indium gallium zinc oxide) transparent thin film transistor (TTFT) were developed on glass substrate for study of gate barrier and channel buffer layer effects. The used gate barrier and the channel buffer layer are high energy band gap dielectric Al2O3 and the rapid thermally annealed ZnO film, respectively. With both gate barrier and channel buffer layers, the TTFT promoted ∼3 orders in on/off current ratio and reduced leakages current ∼800 times. Furthermore, the average transparence was also enhanced from 84% to 86.4% in the range of 500–800 nm wavelengths. The improvement mechanisms are interpreted with comprehensive models in details. |
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