Subthreshold behavior models for short-channel junctionless tri-material cylindrical surrounding-gate MOSFET |
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| Affiliation: | 1. School of Microelectronics, Xidian University, Xi’an 710071, China;2. School of Computer Science and Engineering, Northwestern Polytechnical University, Xi’an 710072, China;1. Department of Electronic Information Science, Fujian Jiangxia College, Fuzhou 350007, China;2. Key Laboratory of Optoelectronic Science and Technology for Medicine Ministry of Education/Fujian Provincial Key Laboratory for Photonics Technology, Fujian Normal University, Fuzhou 350007, China;1. Department of Physics, King’s College London, Strand, London WC2R 2LS, UK;2. Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, UK |
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| Abstract: | A novel junctionless tri-material cylindrical surrounding-gate (JLTMCSG) MOSFET is presented in this paper. The subthreshold behavior of JLTMCSG MOSFET is investigated by developing physical based analytical models for channel electrostatic potential, horizontal electric field, and subthreshold current. It is revealed that JLTMCSG MOSFET can effectively suppress DIBL and simultaneously improve carrier transport efficiency. It is also found that subthreshold current for JLTMCSG MOSFET can be significantly reduced by adopting both a small oxide thickness and a thin silicon channel. The accuracy of analytical model is verified by its good agreement with the three-dimensional numerical device simulator ISE. |
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