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Thermal-aware design and fault analysis of a DC/DC parallel resonant converter
Affiliation:1. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Cerdanyola del Valles, Spain;2. Departamento de Electricidad y Electrónica, Universidad de Valladolid, Valladolid, Spain;3. Department of Chemistry, University of Helsinki, Helsinki, Finland;1. Le2i, UMR CNRS 6306, University of Burgundy, 9 Avenue Alain Savary, 21000 Dijon, France;2. Centre National d’Etudes Spatiales (CNES), 18 Avenue Edouard Belin, 31401 Toulouse, France;1. STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles Cedex, France;2. Laboratory of Computer Sciences, Paris 6 (LIP6), Systems On Chips Department, UPMC University, 4 place Jussieu, 75252 Paris Cedex 05, France;1. Engineering Product Development Pillar, Singapore University of Technology and Design, Singapore 138 682, Singapore;2. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA;1. University of Vienna, Physics of Nanostructured Materials, Vienna, Austria;2. Materials Center Leoben Forschung GmbH, Leoben, Austria;3. Vienna University of Technology, Faculty of Technical Chemistry, Vienna, Austria;1. IMS-Bordeaux, Université de Bordeaux – UMR 5218, 351 cours de la Libération, 33405 Talence, France;2. Information Technology Laboratory, Gottfried Wilhelm Leibniz Universität Hannover, Hannover, Germany
Abstract:In this paper a 3-D electrothermal (ET) analysis of a DC–DC parallel resonant converter (PRC) for constant current (CC) application is presented. A full 3-D ET simulation approach is proposed at application level to provide a support for the design stage and to analyse possible fault conditions inside the active devices. Simulations and measurements have been performed on a 100 W–2 A prototype of a PRC-CC circuit with 80 kHz nominal switching frequency.In particular, in the reported case study, the analysis has been focused on the full-bridge section of the circuit in order to prove the effect of the soft switching operation, introduced by the resonant technique, and consider the effect of possible fault conditions. To this purpose an unexpected short-circuit condition on a power MOSFET composing the H-bridge is considered, to evaluate the ET circuit behaviour and the time-to-failure of the power section. Considerations are carried out in terms of minimum requirements of protection circuits which must be fulfilled in order to avoid catastrophic system failure.A second power converter, rated for 1.5 kW, has been then designed, based on the same circuital topology, and an ET simulation has been performed in order to carry out considerations on the effect of mismatches among the input bridge devices.
Keywords:Electro-thermal simulations  System level simulations  ELDO spice  COMSOL multiphysics  DC–DC resonant converters
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