Precise nanofabrication with multiple ion beams for advanced circuit edit |
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| Affiliation: | 1. Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Cerdanyola del Valles, Spain;2. Departamento de Electricidad y Electrónica, Universidad de Valladolid, Valladolid, Spain;3. Department of Chemistry, University of Helsinki, Helsinki, Finland;1. STMicroelectronics, 850, rue Jean Monnet, 38926 Crolles Cedex, France;2. Laboratory of Computer Sciences, Paris 6 (LIP6), Systems On Chips Department, UPMC University, 4 place Jussieu, 75252 Paris Cedex 05, France;1. SAGE-ENISo, National Engineering School of Sousse, 4023 University of Sousse, Tunisia;2. Al Leith Engineering College, Umm Al-Qura University, Saudi Arabia;3. ISIM, University of Gabes, 6072 Gabes, Tunisia;4. ESTACA Research Center, 92532 Levallois Perret, Paris, France;5. GPM-UMR CNRS 6634, University of Rouen, 76801 Saint Etienne du Rouvray, France;1. University of Vienna, Physics of Nanostructured Materials, Vienna, Austria;2. Materials Center Leoben Forschung GmbH, Leoben, Austria;3. Vienna University of Technology, Faculty of Technical Chemistry, Vienna, Austria;1. Le2i, UMR CNRS 6306, University of Burgundy, 9 Avenue Alain Savary, 21000 Dijon, France;2. Centre National d’Etudes Spatiales (CNES), 18 Avenue Edouard Belin, 31401 Toulouse, France |
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| Abstract: | Gallium focused ion beam (Ga-FIB) systems have been used historically in the semiconductor industry for circuit edit. Significant efforts have been invested to improve the performance of Ga-FIB. However, as the dimensions of integrated circuits continue to shrink, Ga-FIB induced processes are being driven to their physical limits. A helium ion beam offers high spatial resolution imaging as well as precise ion machining and sub-10 nm nanofabrication capabilities because the probe size can be brought to as small as 0.25 nm. However, it is limited by its relatively low material removal rate. Recently, the new Zeiss Orion-NanoFab microscope provides multiple ion beams (He, Ne and Ga as an option) into one platform and promotes the further studies of He and Ne induced deposition and etching processes to compare with a Ga ion beam. Because of the mass difference between He, Ne and Ga ions, the interactions of ions with sample surface and precursor molecules result in different sputtering rates, implantation and deposition yields. This presentation gives an overview of our current studies using this new platform to deposit or mill nanostructures for circuit edit. |
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| Keywords: | Nanofabrication Helium ion beam microscope Beam chemistry Metal deposition Milling Endpoint detection |
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