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SnO2纳米线的低温生长及光致发光研究
引用本文:王冰,徐平,杨国伟.SnO2纳米线的低温生长及光致发光研究[J].半导体学报,2008,29(8):1469-1474.
作者姓名:王冰  徐平  杨国伟
作者单位:深圳大学电子科学与技术学院 深圳微纳光子信息技术重点实验室,深圳 518060;深圳大学电子科学与技术学院 深圳微纳光子信息技术重点实验室,深圳 518060;中山大学光电材料与技术国家重点实验室,广州 510275
基金项目:深圳大学校科研和教改项目
摘    要:在550℃下,通过Au-Ag合金助催热蒸发氧化亚锡,制备了25nm的Sn02纳米线.测试了Sn02纳米线的室温光致发光谱,其四个发光峰中,418nm的峰足新发现的峰,它是孪晶纳米线的面缺陷造成的.SnO2纳米线的低温生长机制遵从VLS生长机制,且与5nO粉末的应用有一定的关系.Sn02纳米线的较小尺度与气相因子的低温度低浓度化学反应有关.

关 键 词:晶体生长  纳米材料  形貌  光致发光
修稿时间:6/19/2008 5:09:13 PM

Low-Temperature Growth and Photoluminescence of SnO2 Nanowires
Wang Bing,Xu Ping and Yang Guowei.Low-Temperature Growth and Photoluminescence of SnO2 Nanowires[J].Chinese Journal of Semiconductors,2008,29(8):1469-1474.
Authors:Wang Bing  Xu Ping and Yang Guowei
Affiliation:Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology,School of Electronic Science and Technology,Shenzhen University,Shenzhen 518060,China;Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology,School of Electronic Science and Technology,Shenzhen University,Shenzhen 518060,China;State Key Laboratory of Optoelectronic Materials and Technologies,Institute of Optoelectronic and Functional Composite Materials,School of Physics Science & Engineering,Zhongshan University,Guangzhou 510275,China
Abstract:SnO2 nanowires with the diameter of 25 nm have been synthesized at the temperature of 550 ºC by Au-Ag catalyst assisted thermal evaporation of SnO powders. The room-temperature photoluminescence spectra (PL) of the prepared nanowires are measured. Among four peaks of PL, the peak of 418 nm is the newly observed, which is caused by the plane defects of the twinned crystal nanowires. The formation of SnO2 nanowires at the low temperature is pursued on the basis of the VLS mechanism and application of the reaction source of SnO. The chemical reactions of the low temperature and low concentration of the vaporized species are suggested to be responsible for the thinner size of SnO2 nanowires.
Keywords:crystal growth  nanomaterials  morphology  photoluminescence
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