| Si(111)表面电子结构 |
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| 引用本文： | 张海峰,李永平. Si(111)表面电子结构[J]. 量子电子学报, 1993, 0(3) |
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| 作者姓名： | 张海峰 李永平 |
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| 作者单位： | 中国科技大学材料科学与工程系，中国科技大学物理系中国科技大学结构分析研究开放实验室 合肥，230026，合肥，230026 |
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| 基金项目： | 国家自然科学基金课题:项目批准号:1924012 |
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| 摘 要： | 本文利用自洽LMTO-ASA方法研究了晶体Si及Si(111)表面的几种模型的电子结构,给出了在slab模型各不同结构下的态密度和分波态密度,以及各不等价原子态密度和分波态密度,该结果与其它理论计算和实验结果相吻合
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| 关 键 词： | LMTO方法 表面电子结构 光学性质 |
The Electronic Structure of Si(111) |
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| Zhang Haifeng,Li Yongping. The Electronic Structure of Si(111)[J]. Chinese Journal of Quantum Electronics, 1993, 0(3) |
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| Authors: | Zhang Haifeng Li Yongping |
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| Affiliation: | Zhang Haifeng,Li Yongping Department of Material Science and Engineering,University of Science and Technology of China,230026 Department of Physics,University of Science and Technology of China The Structure Research Laboratory,University of Science and Technology of China,Hefei,230026 |
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| Abstract: | In this paper, the electronic structure of bulk Si and several kinds of Si(111)surface models are studied by self-consistent LMTO-ASA methods. The densitiesof states and partial densities of states for those models and for the atoms in non-equivalency layers are presented, the results are in good agreement with othertheoretical and experimental work. |
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| Keywords: | LMTO method surface electronic structure optical properties |
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