| AlN薄膜制备技术研究 |
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| 引用本文： | 金成飞,司美菊,徐阳,杜波,陈云祥.AlN薄膜制备技术研究[J].压电与声光,2016,38(4):539-540. |
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| 作者姓名： | 金成飞 司美菊 徐阳 杜波 陈云祥 |
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| 作者单位： | （中国电子科技集团公司第二十六研究所，重庆 400060） |
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| 摘 要： | 采用磁控溅射法制备了AlN薄膜并研究了射频(RF)等离子清洗对AlN薄膜结晶取向度的影响,实验表明,RF等离子清洗基片3min后AlN薄膜c轴取向摇摆曲线半峰宽达到1.3°;通过Mo薄膜衬底对AlN薄膜结晶取向度的影响发现,取向度好的Mo薄膜衬底有利于c轴取向AlN薄膜的生长;Ar气体流量对AlN薄膜应力的影响使AlN薄膜应力从-390(压应力)~73 MPa(张应力)可调。
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| 关 键 词： | AlN薄膜 磁控溅射 结晶取向度 应力 薄膜体声波谐振器(FBAR) |
Study on AlN Thin Film Preparation |
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| JIN Chengfei,SI Meiju,XU Yang,DU Bo and CHEN Yunxiang.Study on AlN Thin Film Preparation[J].Piezoelectrics & Acoustooptics,2016,38(4):539-540. |
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| Authors: | JIN Chengfei SI Meiju XU Yang DU Bo and CHEN Yunxiang |
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| Affiliation: | (26th Institude of China Electronics Technology Group Corporation, Chongqing 400060, China) |
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| Abstract: | AllN thin films were deposited by the sputtering method. The effect of RF plasma cleaning on the AlN film crystal orientation was studied. The experimental results show that the AlN film c-axis orientation rocking curve was improved to 1.3° after cleaning with RF plasma for 3 minutes. The influence of Mo film substrate on AlN film crystal orientation was investigated. It shown that Mo thin film substrate with better orientation was beneficial for the growth of AlN film with c-axial orientation. The effect of Ar flow to AlN film stress was also analyzed, AlN film stress could be controlled from -390 MPa(compressive stress) to 73 MPa(tensile stress). |
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| Keywords: | AlN thin film sputtering crystal orientation stress FBAR |
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