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Asymmetry of Magnetization Reversal of Pinned Layer in NiFe/Cu/NiFe/IrMn Spin-Valve Structure |
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| Authors: | N. G. Chechenin P. N. Chernykh S. A. Dushenko I. O. Dzhun A. Y. Goikhman V. V. Rodionova |
| Affiliation: | 1. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Leninskie gory, GSP-1, 119991, Moscow, Russia 2. Faculty of Physics, Lomonosov Moscow State University, 119991, Moscow, Russia 3. Immanuel Kant Baltic Federal University, 236041, Kaliningrad, Russia 4. Departamento de Fisica de Materiales, Facultad de Quimicas, UPV/EHU, 20009, San Sebastian, Spain |
| Abstract: | Two types of asymmetry in giant magnetoresistance (GMR) are observed which are not related to a training effect, but indicate different mechanisms of magnetization reversal of the pinned layer in spin-valve (SV) structures for ascending and descending field scans. GMR, exchange bias and coercivity in Si/Ta/NiFe/Cu/NiFe/IrMn/Ta SV-structures were investigated as functions of the thickness of the nonmagnetic spacer. The spacer thickness effects are discussed in correlation with layers microstructure and interfaces morphology variations. |
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