The emission process of secondary ions from solids bombarded with large gas cluster ions |
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Authors: | Satoshi Ninomiya Kazuya Ichiki Takaaki Aoki Jiro Matsuo |
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Affiliation: | a Quantum Science and Engineering Centre, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan b Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto 606-8501, Japan c Electronic Science and Engineering, Kyoto University, Nishikyo, Kyoto 615-8510, Japan d CREST, Japan Science and Technology Agency (JST), Chiyoda, Tokyo 102-0075, Japan |
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Abstract: | We investigated the effects of size and energy of large incident Ar cluster ions on the secondary ion emission of Si. The secondary ions were measured using a double deflection method and a time-of-flight (TOF) technique. The size of the incident Ar cluster ions was between a few hundreds and several tens of thousands of atoms, and the energy up to 60 keV. Under the incidence of keV energy atomic Ar ions, mainly atomic Si ions were detected, whereas Si cluster ions were rarely observed. On the other hand, under the incidence of large Ar cluster ions, the dominant secondary ions were (2 ? n ? 11). It has become clear that the yield ratio of secondary Si cluster ions was determined by the velocity of the incident cluster ions, and this strong dependence of the yield ratio on incident velocity should be related to the mechanisms of secondary ion emission under large Ar cluster ion bombardment. |
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Keywords: | 79 20 &minus m 79 20 Rf |
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