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Investigations of structural, dielectric and optical properties on silicon ion irradiated glycine monophosphate single crystals |
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| Authors: | T. Kanagasekaran P. Mythili D. Kanjilal |
| Affiliation: | a Department of Physics, Anna University, Chennai 600 025, India b Materials Characterization Division, National Physical Laboratory, New Delhi 110012, India c Inter University Accelerator Centre, New Delhi 110 067, India d Department of Physics and Astrophysics, University of Delhi, New Delhi 110 007, India |
| Abstract: | The 50 MeV silicon ion irradiation induced modifications on structural, optical and dielectric properties of solution grown glycine monophosphate (GMP) crystals were studied. The high-resolution X-ray diffraction study shows the unaltered value of integrated intensity on irradiation. The dielectric constant as a function of frequency and temperature was studied. UV-visible studies reveal the decrease in bandgap values on irradiation and presence of F-centers. The fluorescence spectrum shows the existence of some energy levels, which remains unaffected after irradiation. The scanning electron micrographs reveal the defects formed on irradiation. |
| Keywords: | 61.50.&minus f 36.40.Vz 51.50.+v 68.37.Hk |
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