Cross-section transmission electron microscopy of the ion implantation damage in annealed diamond |
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Authors: | T.E. Derry E.K. Nshingabigwi M. Levitt S.R. Naidoo |
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Affiliation: | a DST/NRF Centre of Excellence in Strong Materials and School of Physics, University of the Witwatersrand, Wits 2050, Johannesburg, South Africa b Department of Physics, National University of Rwanda, P.O. Box 117, Huye, Rwanda c DST/NRF CoE-SM and Physics Department, Nelson Mandela Metropolitan University, Port Elizabeth, South Africa |
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Abstract: | It has formerly been shown that low-damage levels, produced during the implantation doping of diamond as a semiconductor, anneal easily while high levels “graphitize” (above about 5.2 × 1015 ions/cm2). The difference in the defect types and their profiles, in the two cases, has never been directly observed. We have succeeded in using cross-section transmission electron microscopy to do so. The experiments were difficult because the specimens must be polished to ∼40 μm thickness, then implanted on edge and annealed, before final ion beam thinning to electron transparency. The low-damage micrographs reveal some deeply penetrating dislocations, whose existence had been predicted in earlier work. |
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Keywords: | 61.80.Jh 61.72.Lk 61.72.up |
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