Microstructure evolution of Ge implanted silicon oxide thin films upon annealing treatments |
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Authors: | RS Yu M Maekawa T Sekiguchi XB Qin |
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Affiliation: | a Institute of High Energy Physics, Chinese Academy of Sciences, No. 19 Yu Quan Lu, Beijing 100049, China b Japan Atomic Energy Agency, Advanced Science Research Center, Watanuki 1233, Takasaki, Gunma 370-1292, Japan c Advanced Electronic Material Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan |
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Abstract: | The structural evolution of silicon oxide films with Ge+ implantation was traced with a positron beam equipped with positron annihilation Doppler broadening and lifetime spectrometers. Results indicate that the film structure change as a function of the annealing temperature could be divided into four stages: (I) T < 300 °C; (II) 300 °C ? T ? 500 °C; (III) 600 °C ? T ? 800 °C; (IV) T ? 900 °C. In comparison with stage I, the increased positron annihilation Doppler broadening S values during stage II is ascribed to the annealing out of point defects and coalescence of intrinsic open volumes in silicon oxides. The obtained long positron lifetime and high S values without much fluctuation in stage III suggest a rather stable film structure. Further annealing above 900 °C brings about dramatic change of the film structure with Ge precipitation. Positron annihilation spectroscopy is thereby a sensitive probe for the diagnosis of microstructure variation of silicon oxide thin films with nano-precipitation. |
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Keywords: | 78 70 Bj 82 30 Gg 61 72 &minus y |
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