Positron annihilation on the surfaces of SiO2 films thermally grown on single crystal of Cz-Si |
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Authors: | Wen Deng Li Yue Wei Zhang Xu-xin Cheng Yan-yan Zhu Yu-yang Huang |
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Affiliation: | Department of Physics, Guangxi University, Nanning 530004, PR China |
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Abstract: | Two-detector coincidence system and mono-energetic slow positron beam has been applied to measure the Doppler broadening spectra for single crystals of SiO2, SiO2 films with different thickness thermally grown on single crystal of Cz-Si, and single crystal of Si without oxide film. Oxygen is recognized as a peak at about 11.85 × 10−3m0c on the ratio curves. The S parameters decrease with the increase of positron implantation energy for the single crystal of SiO2 and Si without oxide film. However, for the thermally grown SiO2-Si sample, the S parameters in near surface of the sample increase with positron implantation energy. It is due to the formation of silicon oxide at the surface, which lead to lower S value. S and W parameters vary with positron implantation depth indicate that the SiO2-Si system consist of a surface layer, a SiO2 layer, a SiO2-Si interface layer and a semi-infinite Si substrate. |
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Keywords: | 78 70 Bj 61 72 uf 68 47 Gh 68 35 &minus p 61 72 &minus y |
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