Experimental study on heavy ion single event effects in SOI SRAMs |
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Authors: | Li Yonghong He Chaohui Zhao Fazhan Liu Gang Liu Jie |
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Affiliation: | a Xi’an Jiaotong University, No. 28 West Road Xianning, Xi’an 710049, PR China b Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, PR China c Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, PR China d China Institute of Atomic Energy, Beijing 102413, PR China |
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Abstract: | Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and space applications. The use of SOI has been motivated by the full dielectric isolation of individual transistors, which prevents latch-up. The sensitive region for charge collection in SOI technologies is much smaller than for bulk-silicon devices potentially making SOI devices much harder to single event upset (SEU). In this study, 64 kB SOI SRAMs were exposed to different heavy ions, such as Cu, Br, I, Kr. Experimental results show that the heavy ion SEU threshold linear energy transfer (LET) in the 64 kB SOI SRAMs is about 71.8 MeV cm2/mg. Accorded to the experimental results, the single event upset rate (SEUR) in space orbits were calculated and they are at the order of 10−13 upset/(day bit). |
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Keywords: | 61.80.Jh 85.40.Vb |
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