Growth of silicon nitride films by bombarding amorphous silicon with N ions: MD simulation

In this study, the molecular dynamics simulation method was employed to investigate the growth of silicon nitride films by using N⁺ ions, with energies of 50, 100, 150 and 200 eV, to bombard an amorphous silicon surface at 300 K. After an initial period of N⁺ bombardment, saturation of the number of N atoms deposited on the surface is observed, which is in agreement with experiments. During subsequent steady state deposition, a balance between uptake of N by the surface and sputtering of previously deposited N is established. The Si(N_x) (x = 1-4) and N(Si_y) (y = 1-3) bond configurations in the grown films are analyzed.