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Ion beam induced defects in solids studied by optical techniques
Authors:JD Comins  GO Amolo  SH Connell  MJ Witcomb
Affiliation:a Materials Physics Research Institute, School of Physics, University of the Witwatersrand, Johannesburg, South Africa
b Raman and Luminescence Laboratory, University of the Witwatersrand, Johannesburg, South Africa
c DST/NRF Centre of Excellence in Strong Materials, University of the Witwatersrand, Johannesburg, South Africa
d Electron Microscope Unit, University of the Witwatersrand, Johannesburg, South Africa
Abstract:Optical methods can provide important insights into the mechanisms and consequences of ion beam interactions with solids. This is illustrated by four distinctly different systems.X- and Y-cut LiNbO3 crystals implanted with 8 MeV Au3+ ions with a fluence of 1 × 1017 ions/cm2 result in gold nanoparticle formation during high temperature annealing. Optical extinction curves simulated by the Mie theory provide the average nanoparticle sizes. TEM studies are in reasonable agreement and confirm a near-spherical nanoparticle shape but with surface facets. Large temperature differences in the nanoparticle creation in the X- and Y-cut crystals are explained by recrystallisation of the initially amorphised regions so as to recreate the prior crystal structure and to result in anisotropic diffusion of the implanted gold.Defect formation in alkali halides using ion beam irradiation has provided new information. Radiation-hard CsI crystals bombarded with 1 MeV protons at 300 K successfully produce F-type centres and V-centres having the View the MathML source structure as identified by optical absorption and Raman studies. The results are discussed in relation to the formation of interstitial iodine aggregates of various types in alkali iodides. Depth profiling of View the MathML source and View the MathML source aggregates created in RbI bombarded with 13.6 MeV/A argon ions at 300 K is discussed.The recrystallisation of an amorphous silicon layer created in crystalline silicon bombarded with 100 keV carbon ions with a fluence of 5 × 1017 ions/cm2 during subsequent high temperature annealing is studied by Raman and Brillouin light scattering.Irradiation of tin-doped indium oxide (ITO) films with 1 MeV protons with fluences from 1 × 1015 to 250 × 1015 ions/cm−2 induces visible darkening over a broad spectral region that shows three stages of development. This is attributed to the formation of defect clusters by a model of defect growth and also high fluence optical absorption studies. X-ray diffraction studies show evidence of a strained lattice after the proton bombardment and recovery after long period storage. The effects are attributed to the annealing of the defects produced.
Keywords:61  80  Jh  61  82  &minus  d  61  72  Ww  61  46  +w
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