| 阶梯掺杂漂移区SOI高压器件浓度分布优化模型 |
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| 引用本文： | 郭宇锋,刘勇,李肇基,张波,方健,刘全旺,张剑.阶梯掺杂漂移区SOI高压器件浓度分布优化模型[J].微电子学,2005,35(3):256-259. |
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| 作者姓名： | 郭宇锋 刘勇 李肇基 张波 方健 刘全旺 张剑 |
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| 作者单位： | 1. 电子科技大学,IC设计中心,四川,成都,610054
2. 中国电子科技集团公司,第二十四研究所,重庆,400060 |
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| 摘 要： | 基于分区求解二维泊松方程,提出了阶梯掺杂漂移区SOI高压器件的浓度分布优化模型.借助此模型,对阶梯数从0到无穷时SOI RESURF结构的临界电场和击穿电压进行了研究.结果表明,对于所研究的结构,一阶或二阶掺杂可以在不提高工艺难度的情况下获得足够高的击穿电压,因而可以作为线性漂移区的理想近似.解析结果、MEDICI仿真结果和实验结果非常吻合,证明了模型的正确性.
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| 关 键 词： | 高压器件 阶梯掺杂 击穿电压 模型 |
| 文章编号： | 1004-3365(2005)03-0256-04 |
An Analytical Model for Optimizing SOI High Voltage Device with Step Doping Profile in Drift Region |
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| GUO Yu-feng,LIU Yong,LI Zhao-Ji,ZHANG Bo,FANG Jian,LIU Quan-wang,ZHANG Jian.An Analytical Model for Optimizing SOI High Voltage Device with Step Doping Profile in Drift Region[J].Microelectronics,2005,35(3):256-259. |
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| Authors: | GUO Yu-feng LIU Yong LI Zhao-Ji ZHANG Bo FANG Jian LIU Quan-wang ZHANG Jian |
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| Abstract: | Based on the solution of 2-D Poisson equation, an analytical model for optimization of SOI high voltage devices with step doping profile in drift region is proposed. The critical electric field and breakdown voltage are analyzed based on the model for step number variations from 0 to infinite. It has been shown that the single- or two-step profile results in much higher breakdown voltage over the uniformly doped profile while providing simplification in design and processing, compared to the linearly graded profile in the analyzed device. The availability of the proposed model is verified by the good accordance between analytical results, numerical simulations and reported experiments. |
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| Keywords: | SOI RESURF |
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