TEM样品制备中离子束对样品的损伤分析

针对TEM样品制备过程中离子束对样品的损伤所产生的"非晶化"影响进行分析和研究。在总结已有成果的基础上,得到一些新的突破:通过可信、简便的制样方法,可以直接观察到"非晶层";可以量测聚焦离子束制备的可供TEM分析的IC硅衬底样品的极限厚度。通过一系列自主设计的实验,得到如下结果:离子束的能量对"非晶层"厚度的影像非常大;"非晶层"的厚度与切割时离子束的加速电压有关,与离子束电流及入射角度等基本无关。

Analysis for Sample by FIB in TEM

It has been reported that a sample prepared by ion beam milling has a sandwich structure with amorphous on two sidewalls and crystal in the middle.In this paper,the sandwich structure of such a single crystal TEM sample was studied experimentally.A novel method was invented to prepare the sample,which facilitates the direct observation of amorphous layers on the sidewall. Another fabrication process were also reported.The sandwich structure can be observed directly in TEM with this sample.Get results via a series of preciseness and convenient experiments. The ion beam energy is the dominant factor that affects the damaged layer thickness. The damage layer thickness is constant with different beam currents and the sample tilt angle.But the ion beam acceleration voltage affects it.