Dissociation process of CH4/H2 gas mixture during EACVD

The dissociation process of CH₄/H₂ gas mixture during EACVD has been investigated using Monte Carlo simulation for the first time. The electron velocity distribution and H₂ dissociation were obtained over a wide range: 100<E/N<2000 Td. The variation of CH₄ dissociation with CH₄ concentration in the filling gas has been simulated. The electron velocity profile is asymmetric for the component parallel to the field. Most electrons possess non-zero velocity parallel to the substrate. The number of atomic H is a function of E/N. There are two peaks at E/N=177 Td and 460 Td. The appropriate E/N is suggested to be 500–800 Td for low temperature deposition. The main diamond growth precursor is proposed to be CH₃ and CH₃⁺.