| 有限负压下熔体硅中磷的挥发去除(英文) |
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| 引用本文： | 郑淞生,Jafar SAFARIAN,Seongho SEOK,Sungwook KIM,Merete TANGSTAD,罗学涛.有限负压下熔体硅中磷的挥发去除(英文)[J].中国有色金属学会会刊,2011(3):697-702. |
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| 作者姓名： | 郑淞生 Jafar SAFARIAN Seongho SEOK Sungwook KIM Merete TANGSTAD 罗学涛 |
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| 作者单位： | 厦门大学材料科学与工程系;Department of Material Science;Norwegian University of Science and Technology;Silicon Refining Research Team;Research Institute of Science and Technology; |
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| 基金项目： | Project (2007J0012) supported by the Natural Science Foundation of Fujian Province, China; Project (2007HZ0005-2) supported by the Key Technological Program of Fujian Province, China; Project (BASIC-10341702) supported by Norwegian Research Council |
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| 摘 要： | 对有限负压下熔体硅中磷的挥发去除进行研究。采用电子级硅配制Si-P合金,并采用GD-MS来检测实验前后硅中的磷含量。理论计算结果表明:在有限负压下,硅中的磷以P和P2的气体形式从熔体硅中挥发。实验结果显示:在温度1873K、真空度0.6-0.8Pa、熔炼3600s的条件下,熔体硅中的磷从0.046%(460ppmw)下降到0.001%(10ppmw)。实验结果与理论结果一致表明:当熔体硅中磷的含量大且炉腔内气压相对较高时,磷的去除与气压高度相关;而当炉腔气压很低时,磷的去除基本与气压无关。原因是在相对高磷含量的熔体硅中,磷主要以P2气体的形式挥发;在磷含量较低时,磷主要以单原子气体P的形式挥发。
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| 关 键 词： | 磷浓度 熔体硅 平衡分压 温度 真空度 |
Elimination of phosphorus vaporizing from molten silicon at finite reduced pressure |
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| ZHENG Song-sheng,Jafar SAFARIAN ,Seongho SEOK,Sungwook KIM,Tangstad MERETE,LUO Xue-tao.Elimination of phosphorus vaporizing from molten silicon at finite reduced pressure[J].Transactions of Nonferrous Metals Society of China,2011(3):697-702. |
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| Authors: | ZHENG Song-sheng Jafar SAFARIAN Seongho SEOK Sungwook KIM Tangstad MERETE LUO Xue-tao |
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| Affiliation: | ZHENG Song-sheng1,2,Jafar SAFARIAN 2,Seongho SEOK3,Sungwook KIM3,Tangstad MERETE2,LUO Xue-tao1 1. Department of Materials Science and Engineering,Xiamen University,Xiamen 361005,China,2. Department of Material Science,Norwegian University of Science and Technology,Trondheim 7034,Norway,3. Silicon Refining Research Team,Research Institute of Science and Technology,Pohang 790-600,Korea |
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| Abstract: | Elimination of phosphorus vaporizing from silicon was investigated. Si-P alloy made from electronic grade silicon was used. All the samples were analyzed by GD-MS. Theory calculation determines that phosphorus evaporates from molten silicon as gas species P and P2 at a finite reduced pressure. The experimental results show that phosphorus mass fraction can be decreased from 0.046% (460ppmw) to around 0.001% (10ppmw) under the condition of temperature 1 873 K, chamber pressure 0.6-0.8 Pa, holding time 1 h. B... |
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| Keywords: | phosphorus concentration molten silicon equilibrium partial pressure temperature chamber pressure |
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