| 铜杂质在太阳电池用多晶硅中的沉淀及吸杂行为(英文) |
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| 引用本文： | 李晓强,杨德仁,余学功,阙端麟. 铜杂质在太阳电池用多晶硅中的沉淀及吸杂行为(英文)[J]. 中国有色金属学会会刊, 2011, 0(3): 691-696 |
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| 作者姓名： | 李晓强 杨德仁 余学功 阙端麟 |
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| 作者单位： | 浙江大学材料科学与工程学系硅材料国家重点实验室; |
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| 基金项目： | Projects (60906002, 50832006) supported by the National Natural Science Foundation of China; Project (2009QNA4007) supported by the Fundamental Research Funds for the Central Universities, China |
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| 摘 要： | 采用扫描红外显微镜、光学显微镜、电感耦合等离子质谱仪和微波光电导衰减仪对铜杂质在多晶硅中不同缺陷状态区域的沉淀和吸杂行为进行研究。发现铜杂质沉淀行为与缺陷密度密切相关,在低缺陷密度区域铜杂质大多易于均质形核形成沉淀,而在高缺陷密度区域铜杂质通常会聚集在缺陷处异质形核而沉淀下来。当铜沾污量较高时,由于在硅基体中的肖特基二极管效应,铜沉淀会令多晶硅中的载流子寿命明显缩短。在900℃下进行快速磷吸杂处理后,这两种区域中的铜杂质都不能得到有效去除。
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| 关 键 词： | 多晶硅 铜杂质 磷吸杂 缺陷 载流子寿命 |
Precipitation and gettering behaviors of copper in multicrystalline silicon used for solar cells |
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| LI Xiao-qiang,YANG De-ren,YU Xue-gong,QUE Duan-lin State Key Laboratory of Silicon Materials. Precipitation and gettering behaviors of copper in multicrystalline silicon used for solar cells[J]. Transactions of Nonferrous Metals Society of China, 2011, 0(3): 691-696 |
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| Authors: | LI Xiao-qiang YANG De-ren YU Xue-gong QUE Duan-lin State Key Laboratory of Silicon Materials |
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| Affiliation: | LI Xiao-qiang,YANG De-ren,YU Xue-gong,QUE Duan-lin State Key Laboratory of Silicon Materials,Department of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China |
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| Abstract: | The precipitation and gettering behaviors of copper (Cu) at different defective regions in multicrystalline silicon were investigated by combining scanning infrared microscopy, optical microscopy, inductively coupled plasma mass spectrometry and microwave photo-conductance decay. It is found that the behaviors of Cu precipitation are strongly dependent on the defect density. Most of the Cu contaminants tend to form precipitates homogeneously in the low density defect region, while they mostly segregate at t... |
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| Keywords: | multicrystalline silicon Cu precipitate phosphorus gettering defects carrier lifetime |
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