Measurement of very low tunneling current density inSiO2 using the floating-gate technique

The floating-gate technique for measuring extremely low gate currents has been adapted to the measurement of Fowler-Nordheim tunneling currents in metal-oxide-semiconductor (MOS) capacitors. Using a special structure consisting of an MOS capacitor and a monitor transistor sharing a common-gate electrode, it has proved possible to measure tunneling current densities as low as 2×10^-13 A/cm². The Fowler-Nordheim tunneling relationship was found to be obeyed over the entire measurable range of current density