半导体中的谷间电子转移和体振荡

从GaAs/AlAs量子阱的量子限制、能带混合和隧穿共振中发现了新的异质谷间转移电子效应。用它制成了定位精度高的高效谷间电子布居控制极。把这种控制极设置于耿氏有源层的阴极端,消除了器件中的死区,抑制了强场畴,产生高效的电场弛豫振荡模。通过长有源层样品的模拟设计,发现了新的触发多电子束弛豫振荡模,实现了体振荡。模拟设计得出在20～25GHz频段能获得50W以上的脉冲振荡输出,效率大于40%。

Intervalley electron transference in semiconductor and bulk oscillation

A novel heterostructure intervalley transferred electron effect is discovered through the quantum confine,band mixing and resonant tunneling in GaAs /AlAs quantum well,by using which a high efficient electron population controller with high location precision is fabricated.Putting this controller to the cathode end of Gunn active layer,the dead zone and electric field domain are deleted,from which the electric field relaxation oscillation mode is obtained.When the active layer is elongated the simulation gives out a new multi-electron-beam field relaxation(MBFR)oscillation mode,where the oscillation frequency is independent of the active layer length and so the bulk oscillation is demonstrated.It is expected that the MBFR diodes with pulsed output power larger than50W and conversion efficiency of40%in the band of20to25GHz can be fabricated in the future.