|
|||||
|
|
Wettability of nanocrystalline diamond films |
|
| Authors: | L Ostrovskaya V Perevertailo V Ralchenko A Saveliev V Zhuravlev |
| Affiliation: | aInstitute for Superhard Materials NASU, 2 Avtozavodskaya Str., Kiev 04074, Ukraine bA.M. Prokhorov General Physics Institute RAS, 38 Vavilov Str., Moscow 119991, Russia cInstitute for Problems of Materials Science, 3 Krzhyzhanovsky Str., Kiev 03142, Ukraine |
| Abstract: | The wettability of nanocrystalline CVD diamond films grown in a microwave plasma using Ar/CH4/H2 mixtures with tin melt (250–850 °C) and water was studied by the sessile-drop method. The films showed the highest contact angles θ of 168 ± 3° for tin among all carbon materials. The surface hydrogenation and oxidation allow tailoring of the θ value for water from 106 ± 3° (comparable to polymers) to 5° in a much wider range compared to microcrystalline diamond films. Doping with nitrogen by adding N2 in plasma strongly affects the wetting presumably due to an increase of sp2-carbon fraction in the films and formation of C–N radicals. |
| Keywords: | Nanocrystalline diamond films Wettability Hydrogenation Oxidation Nitrogen doping |
| 本文献已被 ScienceDirect 等数据库收录！ | |