Quantum Critical Point in the Quasi 2D Conductor, (Me-DH-TTP)2AsF6 |
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| Authors: | K. Kobayashi S. Yasuzuka T. Nakanishi K. Yokogawa H. Nishikawa H. Yoshino Keizo Murata |
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| Affiliation: | (1) Department of Material Science, Graduate School of Science, Osaka City University, Sumiyoshi-ku Osaka, 558-8585, Japan;(2) Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba Ibaraki, 305-8571, Japan |
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| Abstract: | A new TTP donor, Me-DH-TTP (2-methyl-5-(1,3-dithiolan-2-yliden)-1,3,4,6-tetrathiapentalene), was designed to realize a system with large on-site Coulomb repulsion as compared with the previously known bis-fused type TTP donors. Probably as a consequence, (Me-DH-TTP)2AsF6 exhibits semiconducting behavior from room temperature to liquid helium temperature. By increasing pressure, metallic behavior appears below 300 K, and with distinct metal-insulator (M-I) transition up to 2.2 GPa. This M-I transition suddenly disappears beyond 2.5 GPa, and metallic state is stabilized down to 2.6 K. We discuss the possibility of quantum critical point around 2.4 GPa. |
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| Keywords: | 71.3 +h 71.20 Rv |
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