| Ge/SiO2和Ge/ZnO/SiO2薄膜的磁控溅射制备及电学性能 |
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| 引用本文： | 余乐,刘劲松,李子全,陈建康,何明霞,彭洁,曹安,刘建宁,蒋维娜,万龙.Ge/SiO2和Ge/ZnO/SiO2薄膜的磁控溅射制备及电学性能[J].化工新型材料,2012,40(4):103-105. |
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| 作者姓名： | 余乐 刘劲松 李子全 陈建康 何明霞 彭洁 曹安 刘建宁 蒋维娜 万龙 |
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| 作者单位： | 南京航空航天大学材料科学与技术学院,南京,210016 |
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| 基金项目： | 江苏省自然科学基金，国家大学生创新性实验计划项目，南京航空航天大学基本科研业务费专项科研项目，南京航空航天大学引进人才基金 |
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| 摘 要： | 采用射频磁控溅射方法以石英玻璃为衬底分别沉积制备出了Ge/SiO2和Ge/ZnO/SiO2薄膜。X射线衍射表明薄膜展示了明显的ZnO衍射峰和较弱的Ge衍射峰;傅里叶变换红外光谱曲线证明薄膜均具有各自的特征吸收峰;扫描电镜结果显示薄膜为颗粒状团簇结构,并且加入ZnO中间层可以有效的改善Ge层的质量。同时,对所得薄膜材料的电流-电压性能进行了研究,结果发现,Ge/SiO2薄膜的I-V曲线拟合后为斜线,相当于电阻;ZnO/SiO2薄膜为直线,可以认为是绝缘体;Ge/ZnO/SiO2薄膜在-10～10V之间电流电压呈线性关系,其电阻比Ge/SiO2薄膜小,当电压值超过15V之后,电流急剧增加而迅速使薄膜击穿,薄膜导通。
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| 关 键 词： | 射频磁控溅射 Ge/SiO2薄膜 Ge/ZnO/SiO2薄膜 电流-电压性能 |
Preparation and electrical properties of Ge/SiO2 and Ge/ZnO/ SiO2 films by magnetron sputtering Method |
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| Yu Le
,
Liu Jinsong
,
Li Ziquan
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Chen Jiankang
,
He Mingxia
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Peng Jie
,
Cao An
,
Liu Jianning
,
Jiang Weina
,
Wan Long.Preparation and electrical properties of Ge/SiO2 and Ge/ZnO/ SiO2 films by magnetron sputtering Method[J].New Chemical Materials,2012,40(4):103-105. |
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| Authors: | Yu Le Liu Jinsong Li Ziquan Chen Jiankang He Mingxia Peng Jie Cao An Liu Jianning Jiang Weina Wan Long |
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| Affiliation: | Yu Le Liu Jinsong Li Ziquan Chen Jiankang He Mingxia Peng Jie Cao An Liu Jianning Jiang Weina Wan Long (College of Material Science and Technology,Nanjing University of Aeronautics and Astronautics,Nanjing210016) |
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| Abstract: | Ge/SiO2 and Ge/ZnO/SiO2 thin films were deposited by radio frequency magnetron sputtering method.X-ray diffraction results indicated that obvious ZnO diffraction peaks and weak Ge diffraction peaks were observed.By FT-IR spectra exhibited the films hadtheir own absorption peaks.SEM images showed that the films were the cluster structure,and ZnO layer improved effectively the quality of Ge layer.In addition,I-V properties of the thin films were studied.The results showed that the I-V curve fitting of Ge/SiO2 and ZnO/SiO2 were a oblique line(resistance) and a straight line(insulator),respectively.For Ge/ZnO/SiO2 film,resistance value of the I-V curve was lower than that of Ge/SiO2 film when the voltage was in range of-10 ~ 10V.When the voltage was bigger than 15V,the current increased sharply and quickly which made the film breakdown to a conductor. |
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| Keywords: | radio frequency magnetron sputtering Ge/SiO2 and Ge/ZnO/SiO2 thin films I-V property |
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