Measurement of Thermoelectric Properties of Single Semiconductor Nanowires |
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Authors: | S. Karg P. Mensch B. Gotsmann H. Schmid P. Das Kanungo H. Ghoneim V. Schmidt M. T. Björk V. Troncale H. Riel |
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Affiliation: | 1. IBM Research-Zurich, S?umerstrasse 4, 8803, Rüschlikon, Switzerland 2. QuNano AB, 22370, Lund, Sweden
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Abstract: | We have measured the thermopower and the thermal conductivity of individual silicon and indium arsenide nanowires (NWs). In this study, we evaluate a self-heating method to determine the thermal conductivity λ. Experimental validation of this method was performed on highly n-doped Si NWs with diameters ranging from 20 nm to 80 nm. The Si NWs exhibited electrical resistivity of $rho = (8pm4), hbox{m}Upomega,hbox{cm}$ ρ = ( 8 ± 4 ) m Ω cm at room temperature and Seebeck coefficient of ?(250 ± 100) μV/K. The thermal conductivity of Si NWs measured using the proposed method is very similar to previously reported values; e.g., for Si NWs with 50 nm diameter, λ = 23 W/(m K) was obtained. Using the same method, we investigated InAs NWs with diameter of 100 nm and resistivities of $rho = (25pm5), hbox{m}Upomega,hbox{cm}$ ρ = ( 25 ± 5 ) m Ω cm at room temperature. Thermal conductivity of λ = 1.8 W/(m K) was obtained, which is about 20 to 30 times smaller than in bulk InAs. We analyzed the accuracy of the self-heating method by means of analytical and numerical solution of the one-dimensional (1-D) heat diffusion equation taking various loss channels into account. For our NWs suspended from the substrate with low-impedance contacts the relative error can be estimated to be ≤25%. |
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