| Abstract: | A simple alternative was studied for the tri-layer resist system. One single thick layer of resist polymer was surface silylated to obtain a bilevel structure that functioned similarly to the bilayer resist composed of the Si-containing top imaging and the bottom planalizing layers. A resist or matrix polymer layer containing phenolic – OH groups was silylated by exposing it to hexamethyldisilazane vapor, and Si atoms were effectively incorporated in the surface sublayer by limited gas permeation and reaction with the – OH groups. Oxygen RIE durability of the silylated poly(vinyl phenol) or the positive-working commercial EB resist, RE-5000P, was > 10 times as high as that of PVP or RE-5000P before silylation. The surface silylated single-layer (SSS) resist derived from RE-5000P was flood-exposed through a mesh mask to 11.7°C/cm2 of 4 KeV electrons, developed with tetramethylammonium hydroxide in aqueous methanol, and plasma-developed in an O2 RIE chamber to form a positive-tone relief image. |
