Failure analysis of multilevel metallized lsi using optical beam induced current

In order to analyse failures caused in multilevel metallized LSI devices. we developed the OBIC (optical beam induced current) observation technique using an infrared laser incident upon a backside of the chip which appears from a plastic package by being lapped and polished. We analysed the electrical rejects in the reliability stressing of surface mount plastic packages with this technique. The latch-up phenomenon in 4Mbit dynamic RAM with retrograded-well fabricated by a high energy (MeV) ion-implantation was also examined. The high latch-up immunity of the device with retrograded-well is confirmed by this analysis.