Ultra-shallow p-junction formation in silicon by excimer laser doping: a heat and mass transfer perspective

Heat and mass transfer at the nanosecond time scale and the nanometer length scale in pulsed laser fabrication of ultra-shallow p⁺-junctions is studied in this work. A new technique is developed to fabricate the ultra-shallow p⁺-junctions with pulsed laser doping of crystalline silicon with a solid spin-on-glass (SOG) dopant, through the nanosecond pulsed laser heating, melting, and boron mass diffusion in the 100 nm thin silicon layer close to the surface. High boron concentration of 10²⁰ atoms cc⁻¹ and the ‘box-like’ junction profile are achieved. The key mechanism determining the ‘box-like’ junction shape is found to be the melt-solid interface limited diffusion. The ultra-shallow p⁺-junctions with the depth from 30 to 400 nm are successfully made by the excimer laser. The optimal laser fluence condition for SOG doping is found about 0.6–0.8 J cm⁻² by studying the ultra-shallow p⁺-junction boron profiles measured by the secondary ion mass spectroscopy (SIMS) vs the laser fluence and the pulse number. The one-dimensional numerical analysis agrees reasonably with the experiment, within the available physical picture. Possible mechanisms such as boron diffusivity dependence on the dopant concentration in the molten silicon are proposed.