Enhanced photovoltaic properties of PbTiO3-based ferroelectric thin films prepared by a sol-gel process |
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| Affiliation: | 1. College of Materials Science and Engineering, Southwest Petroleum University, Chengdu 610500, China;2. College of Materials Science and Engineering, Sichuan University, Chengdu 610000, China;3. Yangtze Normal University, Fuling 408100, China;4. Photovoltaic industry institute of technology, Southwest Petroleum University, Chengdu 610500, China;1. Key Laboratory of New Building Materials and Building Energy Efficiency of Gansu Province, School of Civil Engineering, Northwest Minzu University, Lanzhou 730124, PR China;2. State Key Lab of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, PR China;3. Department of Physics and Engineering Physics, Tulane University, New Orleans 70118, LA, USA;4. Department of Mechanical Engineering, Federal Institute of Pernambuco, Caruaru 55040-120, Brazil;1. Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), Shandong University, Ji’nan 250061, People''s Republic of China;2. Key Laboratory of Engineering Ceramics, Shandong University, Ji’nan 250061, People''s Republic of China;1. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education&International Center for Dielectric Research, Xi’an Jiaotong University, Xi’an 710049, China;2. Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 200092, China;1. Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;2. Instrumental Analysis and Research Center, Institute of Materials, Shanghai University, 99 Shangda Road, Shanghai 200444, China;1. School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China;2. National Engineering Laboratory for Modern Materials Surface Engineering Technology & The Key Lab of Guangdong for Modern Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou 510650, China |
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| Abstract: | PbTiO3 (PTO), Pb(Mn0.1Ti0.9)O3 (PMTO), Pb(Sr0.1Ti0.9)O3 (PSTO), and Pb(Zr0.1Ti0.9)O3 (PZTO) were prepared on an indium tin oxide (ITO)/glass substrate by a sol-gel method. PTO, PMTO, PSTO, and PZTO films exhibited energy band gaps of 3.55 eV, 3.63 eV, 3.59 eV, and 3.66 eV, respectively. All these films generated high photocurrents due to high shift currents, because carrier migration channels were successfully introduced by a lattice mismatch between the films and ITO substrates. The PMTO thin film exhibited the best ferroelectric and photovoltaic properties, with a photovoltage of 0.74 V, a photocurrent density of 70 μA/cm2, and a fill factor of 43.34%, which confirms that shift current and ferroelectric polarization are two main factors that affect the ferroelectric photovoltaic properties. The PSTO, PZTO, and PTO thin films displayed space-charge-limited current (SCLC) when the electric field strength was below 10 kV/cm, and these three films broke down when the electric field strength was above 10 kV/cm. Analysis of the shift current mechanism confirmed that the breakdown of the PZTO and PSTO thin films resulted from Pool Frenkel emission current. The PMTO thin film displayed SCLC in the test range, which indicates that doping with Mn could inhibit defect formation in ferroelectric thin films. |
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| Keywords: | Ferroelectric photovoltaic Doping Shift current mechanism |
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