Enhanced dielectric and energy-storage properties in BiFeO3-modified Bi0.5(Na0.8K0.2)0.5TiO3 thin films |
| |
| Affiliation: | 1. College of Materials Science and Engineering, State Key Laboratory of Material Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, PR China;2. Information Engineering Institute, Huanghe Science and Technology College, Zhengzhou 450000, PR China;3. Mechanical Engineering, University College London, London WC1E 6BT, UK;4. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, PR China;1. Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials (Ministry of Education), School of Materials Science and Engineering, Shandong University, Jinan, 250061, China;2. Suzhou Institute of Shandong University, Suzhou, 215123, China;3. National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA;4. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China;1. Frontier Institute of Science and Technology, and State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China;2. Applied Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, Luleå SE-971 87, Sweden;3. Inner Mongolia Key Laboratory of Ferroelectric-related New Energy Materials and Devices, School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China;1. Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China;2. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai 200050, China;1. MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands;2. International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No. 1 Dai Co Viet Road, Hanoi 10000, Viet Nam;3. Vietnam National University of Forestry, Chuong My District, Hanoi 10000, Viet Nam |
| |
| Abstract: | Lead free Bi0.5(Na0.8K0.2)0.5TiO3 thin films doped with BiFeO3 (abbreviated as BNKT-xBFO) (x = 0, 0.02, 0.04, 0.08, 0.10) were deposited on Pt(111)/Ti/SiO2/Si substrates by sol-gel/spin coating technique and the effects of BiFeO3 content on the crystal structure and electrical properties were investigated in detail. The results showed that all the BNKT-xBFO thin films exhibited a single perovskite phase structure and high-dense surface. Reduced leakage current density, enhanced dielectric and ferroelectric properties were achieved at the optimal composition of BNKT-0.10BFO thin films, with a leakage current density, dielectric constant, dielectric loss and maximum polarization of < 2 × 10?4 A/cm3, ~ 978, ~ 0.028 and ~ 74.13 μC/cm2 at room temperature, respectively. Moreover, the BNKT-0.10BFO thin films possessed superior energy storage properties due to their slim P-E loops and large maximum polarization, with an energy storage density of 22.12 J/cm3 and an energy conversion efficiency of 60.85% under a relatively low electric field of 1200 kV/cm. Furthermore, the first half period of the BNKT-0.10BFO thin film capacitor was about 0.15 μs, during which most charges and energy were released. The large recoverable energy density and the fast discharge process indicated the potential application of the BNKT-0.10BFO thin films in electrostatic capacitors and embedded devices. |
| |
| Keywords: | BNKT-BFO thin films Sol-gel Dielectric properties Energy-storage properties |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
