Strontium doping effects on the characteristics of solution-processed aluminum oxide dielectric layer and its application to low-voltage-operated indium-gallium-zinc-oxide thin-film transistors |
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| Affiliation: | 1. SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea;2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea;3. Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Republic of Korea;1. Dept. of Electronic Materials Engineering, Kwangwoon University, Seoul 01890, Republic of Korea;2. Dept. of Solar & Energy Engineering, Cheongju University, Chungbuk 28503, Republic of Korea;1. School of Aerospace Engineering, Huazhong University of Science and Technology, Wuhan 430074, Hubei, PR China;2. The State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, Hubei, PR China;3. School of Mechanical and Materials Engineering, Washington State University, Pullman 99164, Washington, United States;1. Department of Chemistry, Dankook University, Chungnam, Cheonan 330-714, Republic of Korea;2. Institute of Tissue Regeneration Engineering (ITREN), Dankook University, Chungnam, Cheonan 330-714, Republic of Korea;3. Department of Nanobiomedical Science & BK21 PLUS NBM Global Research Center for Regenerative Medicine, Dankook University, Chungnam, Cheonan 330-714, Republic of Korea |
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| Abstract: | In this paper, we investigated the strontium doping effects on the electrical and physical characteristics of solution-processed aluminum oxide dielectric layer and its application to low-voltage-operated indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). With an optimized doping concentration of strontium (5 at%) in aluminum oxide (Al2O3), an oxide gate dielectric layer having a dielectric constant of ~7 and low leakage current characteristics (~4 × 10?7 A/cm2 at 3 MV/cm) could be achieved by a solution process, which are comparably better than those of pristine Al2O3 film. The enhanced dielectric properties from strontium doping can be attributed to the change in the physical properties of Al2O3 film incorporated with strontium, providing charge relaxation of defect states in Al2O3 film. Also, since the strontium is highly reactive with oxygen, the strontium substitution through a doping leads to more strongly bound structure in an Al2O3 film without considerable lattice distortion. Using the strontium-doped aluminum oxide film as a gate dielectric layer, having a thickness less than 10 nm, solution-processed IGZO TFTs operating at ≤ 1 V were demonstrated showing a field-effect mobility of 1.74 ± 1.10 cm2/V s and an on-current level of ~10?5 A. |
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| Keywords: | Strontium-doped aluminum oxide Gate dielectric Solution process Thin-film transistors |
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