Effects of element chemical states and grain orientation growth of ITO targets on photoelectric properties of the film |
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| Affiliation: | 1. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China;2. Foshan Institute of Sun Yat-Sen University, Foshan 528000, China;1. Technische Universität Darmstadt, Institute of Materials Science, Jovanka-Bontschits-Strasse 2, D-64287 Darmstadt, Germany;2. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;3. Graduate School of Science and Engineering, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo, Sagamihara 252-5258, Japan;1. School of Chemistry, Physics and Mechanical Engineering, Science and Engineering Faculty, Queensland University of Technology, Brisbane, QLD 4001, Australia;2. Institute of Photoelectronic Thin Film Devices and Technology, Tianjin Key Laboratory of Thin Film Devices and Technology, Nankai University, Tianjin 300071, PR China |
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| Abstract: | A study was carried out to compare element chemical states and grain orientation growth between two ITO targets, which were respectively sintered at 1560 °C (target A#) and 1600 °C (target B#). The lower sintering temperature can be beneficial to increase mass content ratio of In2O3 to SnO2, reduce the production of Sn2+ ions and the component of O-In as well as increase oxygen holes, and can also promote grain orientation growth of In2O3 and In4Sn3O12 phase. Three groups of ITO films were deposited at 230 °C using these targets to investigate the effects of sputtering parameters on the photoelectric properties of ITO films. Under different sputtering pressures, the sheet resistance for target A# has higher sensitivity to low O2 flow, while target B# displays higher sensitivity to high O2 flow. In the case of sputtering pressure of 0.5 Pa, ITO films for target A# displays the highest visible transmittance. In addition, annealing process could decrease the sheet resistance and improve the transmittance of ITO films because of its effect on the crystallinity and surface morphology of ITO films. |
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| Keywords: | Element chemical states Grain orientation growth Annealing process Photoelectric properties |
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