Fabrication of highly efficient TiO2/Ag/TiO2 multilayer transparent conducting electrode with N ion implantation for optoelectronic applications |
| |
| Affiliation: | 1. Department of Physics, Malaviya National Institute of Technology, Jaipur 302017, India;2. Materials Research Centre, Malaviya National Institute of Technology, Jaipur 302017, India;3. Inter-University Accelerator Centre, Aruna Asaf Ali Road, New Delhi 110067, India;1. Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena, Germany;2. Anna-Siemsen-Strasse 66, 07745 Jena, Germany;1. Jožef Stefan Institute, Jamova cesta 39, SI-1000 Ljubljana, Slovenia;2. Faculty of Mathematics and Physics, University of Ljubljana, Jadranska 19, SI-1000 Ljubljana, Slovenia;1. Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India;2. Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085, India;3. Department of Physics, Indian Institute of Technology, Roorkee 247667, India;4. Department of Physics, Dr. Hari Singh Gour University, MP 470003, India;5. Inter University Accelerator Center, New Delhi 110067, India |
| |
| Abstract: | Fabrication of highly conductive and transparent TiO2/Ag/TiO2 (referred hereafter as TAT) multilayer films with nitrogen implantation is reported. In the present work, TAT films were fabricated with a total thickness of 100 nm by sputtering on glass substrates at room temperature. The as-deposited films were implanted with 40 keV N ions for different fluences (1×1014, 5×1014, 1×1015, 5×1015 and 1×1016 ions/cm2). The objective of this study was to investigate the effect of N+ implantation on the optical and electrical properties of TAT multilayer films. X-ray diffraction of TAT films shows an amorphous TiO2 film with a crystalline peak assigned to Ag (111) diffraction plane. The surface morphology studied by atomic force microscopy (AFM) and field emission scanning electron microscope (FESEM) revealed smooth and uniform top layer of the sandwich structure. The surface roughness of pristine film was 1.7 nm which increases to 2.34 nm on implantation for 1×1014 ions/cm2 fluence. Beyond this fluence, the roughness decreases. The oxide/metal/oxide structure exhibits an average transmittance ~80% for pristine and ~70% for the implanted film at fluence of 1×1016 ions/cm2 in the visible region. The electrical resistivity of the pristine sample was obtained as 2.04×10−4 Ω cm which is minimized to 9.62×10−5 Ω cm at highest fluence. Sheet resistance of TAT films decreased from 20.4 to 9.62 Ω/□ with an increase in fluence. Electrical and optical parameters such as carrier concentration, carrier mobility, absorption coefficient, band gap, refractive index and extinction coefficient have been calculated for the pristine and implanted films to assess the performance of films. The TAT multilayer film with fluence of 1×1016 ions/cm2 showed maximum Haacke figure of merit (FOM) of 5.7×10−3 Ω−1. X-ray photoelectron spectroscopy (XPS) analysis of N 1s and Ti 2p spectra revealed that substitutional implantation of nitrogen into the TiO2 lattice added new electronic states just above the valence band which is responsible for the narrowing of band gap resulting in the enhancement in electrical conductivity. This study reports that fabrication of multilayer transparent conducting electrode with nitrogen implantation that exhibits superior electrical and optical properties and hence can be an alternative to indium tin oxide (ITO) for futuristic TCE applications in optoelectronic devices. |
| |
| Keywords: | Transparent conducting oxide Multilayer Implantation Hall measurement |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
